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Sano, Naruto; Yamashita, Naoki; Watanabe, Masaya; Tsukada, Manabu*; Hoshino, Kazutoyo*; Hirai, Koki; Ikegami, Yuta*; Tashiro, Shinsuke; Yoshida, Ryoichiro; Hatakeyama, Yuichi; et al.
JAEA-Technology 2023-029, 36 Pages, 2024/03
JAEA-Technology-2023-029.pdf:2.47MB
At the Waste Safety Testing Facility (WASTEF), the gamma ray irradiation device "Gamma Cell 220" was relocated from the 4th research building of the Nuclear Science Research Institute in FY2019, and the use of gamma ray irradiation has begun. Initially, Fuel Cycle Safety Research Group, Fuel Cycle Safety Research Division, Nuclear Safety Research Center, Sector of Nuclear Safety Research and Emergency Preparedness, the owner of this device, conducted the tests as the main user, but since 2022, other users, including those outside the organization, have started using it. The gamma ray irradiation device "Gamma Cell 220" is manufactured by Nordion International Inc. in Canada. Since it was purchased in 1989, the built-in 60Co radiation source has been updated once, and safety research related to nuclear fuel cycles, etc. It is still used for this purpose to this day. This report summarizes the equipment overview of the gamma ray irradiation device "Gamma Cell 220", its permits and licenses at WASTEF, usage status, maintenance and inspection, and future prospects.
irradiation on the adsorption characteristics of xerogel microcapsulesOnishi, Takashi; Tanaka, Kosuke; Koyama, Shinichi; Ou, L. Y.*; Mimura, Hitoshi*
NEA/NSC/R(2017)3, p.463 - 469, 2017/11
no abstracts in English
Oshima, Takeshi; Yokoseki, Takashi; Murata, Koichi; Matsuda, Takuma; Mitomo, Satoshi; Abe, Hiroshi; Makino, Takahiro; Onoda, Shinobu; Hijikata, Yasuto*; Tanaka, Yuki*; et al.
Japanese Journal of Applied Physics, 55(1S), p.01AD01_1 - 01AD01_4, 2016/01
Times Cited Count：14 Percentile：54.92(Physics, Applied)Takeyama, Akinori; Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Onoda, Shinobu; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; et al.
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.134 - 137, 2015/11
-ray irradiationMotooka, Takafumi; Ueno, Fumiyoshi
Zairyo To Kankyo, 64(6), p.220 - 223, 2015/06
Corrosion behavior of carbon steel in chloride aqueous solutions under a low dose rate was investigated by corrosion test using chloride aqueous solutions with different chloride concentration at a dose rate of 500 Gy/h. The corrosion rate of carbon steel increased by the irradiation, and the corrosion rate had the maximum value at a certain chloride concentration. The oxidants produced by radiolysis of chloride aqueous solution enhanced the corrosion of carbon steel. The main oxidants were oxygen and hydrogen peroxide, and the diffusion process of oxidants controlled the corrosion of carbon steel under irradiation. There was a positive correlation between the dependence of corrosion rate and chloride concentration and the dependence of oxidant concentration and chloride concentration.
-ray irradiation on the characteristics of 6H silicon carbide metal-oxide-seminocductor field effect transistor with hydrogen-annealed gate oxideOshima, Takeshi; Ito, Hisayoshi; Yoshikawa, Masahito
Journal of Applied Physics, 90(6), p.3038 - 3041, 2001/09
Times Cited Count：43 Percentile：81.6(Physics, Applied)The effect of gamma-ray irradiation on the electrical characteristics of 6H-SiC MOSFETs with hydrogen-annealed gate oxide was studied.The concentration of radiation induced interface traps increases with increasing gamma-ray dose, however, the number of interface traps is 1/100 smaller than it in Si MOSFET. The channel mobility for 6H-SiC MOSFET does not change at 30 kGy, and it becomes the half of the initial value (52 cm2/Vs) at 500 kGy.Since the channel mobility for Si MOSFET shows 50 % of the initial value at 10 kGy, this indicates that tha radiation resistance of SiC MOSFET is stronger than that of Si MOSFET. As for the cahnnel mobility vs. the concentration of radiation induced interface traps, the same behavior shows for Si and SiC MOSFETs. This suggest the channel mobility in SiC as well as Si decreases by the generation of interface traps which act as scattring centers.
N.Sermkiathipong*; S.Pongpat*; Hashimoto, Shoji; C.Banditsing*; Ito, Hitoshi
Biocontrol Science, 2(2), p.55 - 60, 1997/00
no abstracts in English
*; ; Sukegawa, Takenori; Akutsu, Yoichi; *; *
Nihon Kenchiku Gakkai Kozokei Rombunshu, 0(488), p.1 - 10, 1996/10
no abstracts in English
Obara, Kenjiro; Kakudate, Satoshi; Oka, Kiyoshi; Furuya, Kazuyuki; *; Tada, Eisuke; Shibanuma, Kiyoshi; Koizumi, Koichi; Okawa, Yoshinao; Morita, Yosuke; et al.
JAERI-Tech 96-011, 111 Pages, 1996/03
no abstracts in English
; Miyata, Teijiro
Nihon Genshiryoku Gakkai-Shi, 38(12), p.992 - 1000, 1996/00
Times Cited Count：1 Percentile：14.44(Nuclear Science & Technology)no abstracts in English
Oshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Takahashi, Tetsuo*; Okumura, Hajime*; Yoshida, Sadafumi*; Nashiyama, Isamu
Silicon Carbide and Related Materials 1995 (Institute of Physics Conf. Series,No. 142), 0, p.801 - 804, 1996/00
no abstracts in English
; *; Tamura, Yukito; ;
Materials Research Society Symposium Proceedings, Vol.353, 0, p.71 - 78, 1995/00
no abstracts in English
*; *; *; *; *; *; *; Kume, Tamikazu
Shokuhin Shosha, 29(1-2), p.16 - 20, 1994/00
no abstracts in English
; *; *; Tanimoto, Kenichi; Enokido, Yuji
PNC TN9410 92-208, 68 Pages, 1992/07
The plan of the gelogic disposal of high level waste that need to do estimate the effect of radiation in near field surrouding waste. We have applied "JOYO" spent fuel storage pool as irradiation field and investigated the effect of gamma radiation about quality of groundwater, because we have to obtained a basic data related geologic dispose under irradiaton condition. The experiment was applied artificial brine for simulated groundwater. The same samples were located in "JOYO" spent fuel storage pool without gamma radiation and other effects were estimated. The samples were also observed the variation of quality of artifical brine every fixed time after irradiation and were estimated the effect as the function of time, gamma irradiation were carried out from 24hours (1.0
10
1.310Gy) to 1440 hours (4.410
6.810Gy). The results indicate the following. (1)The change of pH, conductivity and ion concentrations in artifical brine could not be observed in the samples before and after irradiation. (2)Eh of the samples was 241mV before irradiation, but it decreased 156mV after irradiaton for 1440 hours. Eh tend to decrease by increase of the absorption dose. (3)Do of the samples before and after irradiation for 1440 hours were 20.76 and 5930 
g/
, respectively. Do tend to increases by increase of the absorption dose. (4)Before and after irradiation test for 480 hours, nitric ion was detected 2.9 and 105ppm, respectively, In no gamma irradiaton test, nitric ion was detdcted 4.0 and 5.6ppm, respectively. For 1440 hours, nitric ion was detected 15ppm after irradiation and 11ppm after rest without gamma irradiation. (5)pH, Eh, Do, conductivity and all ion concentrations in artifical brine have no the variation as the function ot time within fixed time (about 4hours) after irradiation. These results suggest that oxygen which were generated by the gamma radiolysis of water was incrased Do, ...
Pb
Sr
CaCu
O
ceramicShiraishi, Kensuke; *; *; *
Japanese Journal of Applied Physics, 31(3A), p.L227 - L230, 1992/03
Times Cited Count：3 Percentile：22.53(Physics, Applied)no abstracts in English
; ; Akutsu, Yoichi; Onizawa, Kunio; ; Sukegawa, Takenori; *
JAERI-M 90-205, 62 Pages, 1990/11
no abstracts in English
